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PD - 96213
IRFB4410ZGPBF
HEXFET(R) Power MOSFET
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l Halogen-Free
G
D
G S
VDSS RDS(on) typ. max. ID (Silicon Limited)
D
100V 7.2m: 9.0m: 97A
G
D
S
TO-220AB IRFB4410ZGPBF
D S
Gate
Drain
Source
Absolute Maximum Ratings
Symbol
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw
Max.
97 69 390 230 1.5 20 16 -55 to + 175 300 10lbfxin (1.1Nxm) 242 See Fig. 14, 15, 22a, 22b,
Units
A W W/C V V/ns
e
C
Avalanche Characteristics
EAS (Thermally limited) IAR EAR Single Pulse Avalanche Energy Avalanche CurrentA Repetitive Avalanche Energy
d
mJ A mJ
Thermal Resistance
Symbol
RJC RCS RJA Junction-to-Case Case-to-Sink, Flat Greased Surface , TO-220 Junction-to-Ambient, TO-220
i
Parameter
Typ.
--- 0.50 ---
Max.
0.65 --- 62
Units
C/W
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1
01/06/09
IRFB4410ZGPBF
Static @ TJ = 25C (unless otherwise specified)
Symbol
V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS IGSS RG
Parameter
Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance
Min. Typ. Max. Units
100 --- --- 2.0 --- --- --- --- --- --- 0.12 7.2 --- --- --- --- --- 0.70 --- --- 9.0 4.0 20 250 100 -100 ---
Conditions
V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 5mA m VGS = 10V, ID = 58A V VDS = VGS, ID = 150A A VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V
f
Dynamic @ TJ = 25C (unless otherwise specified)
Symbol
gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR)
Parameter
Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Effective Output Capacitance (Time Related)g
Min. Typ. Max. Units
140 --- --- --- --- --- --- --- --- --- --- --- --- --- --- 83 19 27 56 16 52 43 57 4820 340 170 420 690 --- 120 --- --- --- --- --- --- --- --- --- --- --- S nC
Conditions
VDS = 10V, ID = 58A ID = 58A VDS =50V VGS = 10V ID = 58A, VDS =0V, VGS = 10V VDD = 65V ID = 58A RG =2.7 VGS = 10V VGS = 0V VDS = 50V = 1.0MHz, See Fig.5 VGS = 0V, VDS = 0V to 80V See Fig.11 VGS = 0V, VDS = 0V to 80V
f
ns
f
pF
f
hA
h, gA
Diode Characteristics
Symbol
IS ISM VSD trr Qrr IRRM ton
Parameter
Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)A Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Forward Turn-On Time
Min. Typ. Max. Units
--- --- --- --- 97 390 A A
Conditions
MOSFET symbol showing the integral reverse
G S D
--- --- 1.3 V --- 38 57 ns --- 46 69 --- 53 80 nC TJ = 125C --- 82 120 --- 2.5 --- A TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
p-n junction diode. TJ = 25C, IS = 58A, VGS = 0V TJ = 25C VR = 85V, TJ = 125C IF = 58A di/dt = 100A/s TJ = 25C
f
f
Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 0.143mH RG = 25, IAS = 58A, VGS =10V. Part not recommended for use above this value. ISD 58A, di/dt 610A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Coss eff. (ER) is a fixed capacitance that gives the same energy as R is measured at TJ approximately 90C.
Coss while VDS is rising from 0 to 80% VDSS .
2
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IRFB4410ZGPBF
1000
TOP VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V
1000
TOP VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.8V 4.5V
ID, Drain-to-Source Current (A)
100
BOTTOM
ID, Drain-to-Source Current (A)
100
BOTTOM
4.5V
4.5V 10
10
60s PULSE WIDTH
Tj = 25C 1 0.1 1 10 100 V DS, Drain-to-Source Voltage (V)
1 0.1 1
60s PULSE WIDTH
Tj = 175C
10
100
V DS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
1000
Fig 2. Typical Output Characteristics
2.5
RDS(on) , Drain-to-Source On Resistance (Normalized)
ID, Drain-to-Source Current (A)
VDS = 50V 60s PULSE WIDTH 100
ID = 58A 2.0
VGS = 10V
10 TJ = 175C 1
T J = 25C
1.5
1.0
0.1 2 3 4 5 6 7
0.5 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
100000
VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd C oss = C ds + C gd
Fig 4. Normalized On-Resistance vs. Temperature
12.0 ID= 58A
VGS, Gate-to-Source Voltage (V)
10.0 8.0 6.0 4.0 2.0 0.0
C, Capacitance (pF)
10000 Ciss Coss 1000 Crss
VDS= 80V VDS= 40V VDS= 20V
100 1 10 VDS, Drain-to-Source Voltage (V) 100
0
20
40
60
80
100
QG, Total Gate Charge (nC)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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3
IRFB4410ZGPBF
1000 1000
OPERATION IN THIS AREA LIMITED BY R DS(on)
100sec 1msec
100
T J = 175C
10 T J = 25C 1 VGS = 0V 0.1 0.0 0.5 1.0 1.5 2.0 2.5 VSD, Source-to-Drain Voltage (V)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100
10msec DC
10 Tc = 25C Tj = 175C Single Pulse 1 0 1 10 100 VDS, Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
100
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 8. Maximum Safe Operating Area
125 Id = 5mA 120 115 110 105 100 95 90 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Temperature ( C )
80
ID, Drain Current (A)
60
40
20
0 25 50 75 100 125 150 T C , Case Temperature (C)
Fig 9. Maximum Drain Current vs. Case Temperature
2.0 1.8 1.6 1.4
EAS , Single Pulse Avalanche Energy (mJ)
Fig 10. Drain-to-Source Breakdown Voltage
1000 900 800 700 600 500 400 300 200 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) ID 6.4A 9.4A BOTTOM 58A TOP
Energy (J)
1.2 1.0 0.8 0.6 0.4 0.2 0.0 -10 0 10 20 30 40 50 60 70 80 90 100 VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
4
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IRFB4410ZGPBF
1
Thermal Response ( Z thJC ) C/W
D = 0.50 0.1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE ( THERMAL RESPONSE )
J J 1 R1 R1 2 R2 R2 C 1 2
Ri (C/W) i (sec) 0.237 0.000178 0.413 0.003772
0.01
Ci= i/Ri Ci i/Ri
Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1
0.001 1E-006
1E-005
0.0001
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Duty Cycle = Single Pulse
0.01
Avalanche Current (A)
Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse)
10
0.05 0.10
1 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 0.1 1.0E-06 1.0E-05 1.0E-04 tav (sec) 1.0E-03 1.0E-02 1.0E-01
Fig 14. Typical Avalanche Current vs.Pulsewidth
150 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 58A
100
50
Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
175
EAR , Avalanche Energy (mJ)
0 25 50 75 100 125 150 Starting T J , Junction Temperature (C)
PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav
Fig 15. Maximum Avalanche Energy vs. Temperature
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5
IRFB4410ZGPBF
4.5
VGS(th), Gate threshold Voltage (V)
20
I = 39A F V = 85V R TJ = 25C _____
4.0 3.5 3.0 2.5 2.0 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( C ) ID = 150A ID = 250A ID = 1.0mA ID = 1.0A
IRRM (A)
15
TJ = 125C ----------
10
5
0 100 200 300 400 dif/dt (A/s) 500 600 700
Fig 16. Threshold Voltage vs. Temperature
20
IF = 58A V = 85V R T = 25C _____ J TJ = 125C ----------
Fig. 17 - Typical Recovery Current vs. dif/dt
400 350 300 250
I = 39A F V = 85V R TJ = 25C _____ TJ = 125C ----------
15
IRRM (A)
Qrr (nC)
10
200 150
5
100 50
0 100 200 300 400 dif/dt (A/s) 500 600 700
0 100 200 300 400 dif/dt (A/s) 500 600 700
Fig. 18 - Typical Recovery Current vs. dif/dt
450 400 350 300
Qrr (nC)
I = 58A F V = 85V R TJ = 25C _____ TJ = 125C ----------
Fig. 19 - Typical Stored Charge vs. dif/dt
250 200 150 100 50 0 100 200 300 400 dif/dt (A/s) 500 600 700
6
Fig. 20 - Typical Stored Charge vs. dif/dt
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IRFB4410ZGPBF
D.U.T
Driver Gate Drive
+
P.W.
Period
D=
P.W. Period VGS=10V
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
-
-
+
RG
* * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test
VDD
VDD
+ -
Re-Applied Voltage
Body Diode
Forward Drop
Inductor Curent Inductor Current
Ripple 5% ISD
* VGS = 5V for Logic Level Devices Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs
V(BR)DSS
15V
tp
VDS
L
DRIVER
RG
20V
D.U.T
IAS tp
+ V - DD
A
0.01
I AS
Fig 22a. Unclamped Inductive Test Circuit
LD VDS
Fig 22b. Unclamped Inductive Waveforms
VGS
+
VDD D.U.T
90%
VGS
Second Pulse Width < 1s Duty Factor < 0.1%
10%
VDS
td(off) tf td(on) tr
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id Vds Vgs
L
0
DUT
20K 1K
S
VCC
Vgs(th)
Qgodr
Qgd
Qgs2 Qgs1
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Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
7
IRFB4410ZGPBF
Dimensions are shown in millimeters (inches)
TO-220AB Package Outline
TO-220AB Part Marking Information
@Y6HQG@) UCDTADTA6IADSA7#" BQ7A Ir)AABAAssvAvAhAirA vqvphrAAChytrAAArrA Ir)AAQAAvAhriyAyvrAvv vqvphrAAGrhqAAArrA DIU@SI6UDPI6G S@8UDAD@S GPBP 6TT@H7G GPUA8P9@ Q6SUAIVH7@S 96U@A8P9@) 2G6TUA9DBDUAPA 86G@I96SA@6S XX2XPSFAX@@F Y2A68UPSA8P9@
TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site.
8
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.01/2009
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